Toshiba launches 3rd generation silicon carbide MOSFETs

Toshiba: 3rd generation SiC MOSFETs "TWxxxNxxxC Series" (Graphic: Business Wire)

KUALA LUMPUR, Aug 30 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched new power devices, the “TWxxxNxxxC series”, its 3rd generation silicon carbide(SiC) MOSFETs that deliver low on-resistance and significantly reduced switching loss.

Ten products, five 1200V and five 650V products, have started shipping, according to a statement.

The new products are able to be used for various applications including Switching power supplies (servers, data centre, communications equipment, etc.); EV charging stations; Photovoltaic inverters; and, Uninterruptible power supplies (UPS).

Toshiba will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realise a carbon-free economy by providing high-performance power devices that are easy to use.

Toshiba, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

-- BERNAMA