Gallium Semiconductor Offers First ISM CW Amplifier
KUALA LUMPUR, Sept 20 (Bernama) -- Gallium Semiconductor, a supplier of GaN RF semiconductor solutions, announced the availability of the GTH2e-2425300P ISM CW amplifier, a 2.4-2.5 gigahertz (GHz), 300 watt (W) pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT).
It brings a new level of efficiency for a wide range of Industrial, Scientific, and Medical (ISM) applications including semiconductor plasma sources and microwave plasma chemical vapour deposition (MPCVD) equipment for synthetic diamond production.
“The GTH2e-2425300P signifies an evolution in radio frequency (RF) power amplification and underscores our dedication to optimise performance for ISM applications.
“We will continue to strengthen our portfolio for the ISM market to further support our customers,” said Gallium Semiconductor Director of Product Marketing for Multi-Markets, Angelo Andres in a statement.
Operating within the frequency range of 2.4 to 2.5 GHz and powered by a 50 volt (V) supply rail, the GTH2e-2425300P yields an efficiency rating that redefines benchmarks for RF power capabilities.
With a peak efficiency of 76 per cent, this HEMT embodies Gallium Semiconductor's dedication to improving RF performance.
The GTH2e-2425300P offers excellent reliability and thermal performance with its Super-ceramic matrix composite (CMC) flange, as well as simplifies integration into various systems, enhancing the development process for RF engineers.
-- BERNAMA
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