TOSHIBA UNVEILS HIGH-EFFICIENCY 100V POWER MOSFET FOR DATA CENTRES

^{Toshiba: TPH2R70AR5, a 100V N-channel power MOSFET with the latest generation process technology}

KUALA LUMPUR, Sept 25 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched “TPH2R70AR5”, a 100-volt (V) N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process.

Toshiba in a statement said the MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centres and communications base stations.

The 100V U-MOS11-H series improves on the drain-source On-resistance, total gate charge and the trade-off between them are delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.

In addition, it also offers approximately eight per cent lower drain-source On-resistance and 37 per cent lower total gate charge against TPH3R10AQM, a U-MOSX-H series product.

Toshiba also offers circuit design support tools, the G0 SPICE model, which verifies circuit function in a short time, and the highly accurate G2 SPICE model that accurately reproduces transient characteristics.

A supplier of advanced semiconductor and storage solutions, Toshiba will continue to expand its lineup of low-loss MOSFETs that enable more efficient power supplies and contribute to lower equipment power consumption.

-- BERNAMA