TOSHIBA LAUNCHES 650V 3RD-GENERATION SIC MOSFETS FOR HIGH-EFFICIENCY INDUSTRIAL POWER
- news2u
- Aug 28
- 1 min read
KUALA LUMPUR, Aug 28 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has introduced three 650-volt (V) silicon carbide (SiC) MOSFETs, equipped with its latest third-generation SiC chips and housed in surface-mount TOLL packages.
Volume shipments of the new MOSFETs, “TW027U65C”, “TW048U65C”, and “TW083U65C”, begin today, according to Toshiba in a statement.
The new devices are suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators.
The new MOSFETs deliver significant performance and size advantages. Toshiba claims the TOLL package design reduces device volume by over 80 per cent compared to traditional TO-247 through-hole packages, boosting power density in compact equipment.
The TOLL package also offers lower parasitic impedance, which cuts switching losses. As a 4-terminal package, it supports Kelvin-source connections for improved gate drive performance and high-speed switching.
In tests, the TW048U65C achieved approximately 55 per cent lower turn-on loss and 25 per cent lower turn-off loss compared to Toshiba’s previous generation.
Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.
-- BERNAMA
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